Abstract
Semiconductors typically have very large nonlinear coefficients, e.g. GaAs in the near-infrared has a second-order susceptibility coefficient around 40 times greater than conventional birefringent phase-matched crystals and about 5 times greater than the appropriate coefficient in quasi-phase-matched LiNbO3. It has been established that the modification of the nonlinear coefficient necessary for quasi-phase-matching can be accomplished with quantum well growth and selective area disordering.1
© 1998 IEEE
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