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Terahertz time-domain spectroscopy technique for characterizing GaN thin film

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Abstract

The indices of refraction, extinction constants and complex conductivities of the GaN film for frequencies ranging from 0.2 to 2.5 THz are obtained using THz time-domain spectroscopy. The results correspond well with the Kohlrausch stretched exponential model.

© 2006 Optical Society of America

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