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Ultra-Low Power, Broad-Spectrum Photodetector Exploiting an Sb2Te3/MoS2 Heterojunction

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Abstract

This study presents a novel optoelectronic device employing a strain-tunable MoS2/Sb2Te3 van der Waals p-n heterojunction, designed specifically for efficient photodetection across the visible to near-infrared spectrum.

© 2023 The Author(s)

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