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Conferences > ICOL > 1984 > FE > FE15

Multiple LO phonon scattering in indium bromide

Masashi Yoshida, Hideo Watanabe, Nobuhito Ohno, Kaizo Nakamura, and Yoshio Nakai

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Abstract

Multiple scattering lines of Raman forbidden LO phonon (ħωLO = 16meV) have been observed in orthorhombic InBr by the excitation above the direct exciton energy (Ex=2.331 eV).1) Scattering spectra are characterized by the intensity alternation that even numbered lines are stronger than odd numbered lines. In the present study incident photon energy dependence and temperature dependence of multiple LO phonon lines are investigated to clarify exciton relaxation mechanism in polar semiconductor with inversion symmetry and the origin of intensity alternation.

© 1984 Optical Society of America

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