Abstract

We have studied photoluminescence from modulation-doped GaAs/AlGaAs multiple quantum well (MQW) structures, grown by molecular beam epitaxy, in the presence of high magnetic fields. Experiments were performed using a variety of lasers as excitation sources. In zero field, electrons in the valence band (VB) are photo-excited by the incident laser light to conduction band (CB) states, creating VB holes. They radiatively recombine with the holes, producing the infrared luminescence observed in our experiments which is, in general, rather broad and extends from about 12100-12400cm⁻¹.

© 1984 Optical Society of America