Abstract

The GaAs heavily doped with Si is one of prototypes of disorder-semiconductor with high concentration of charged impurities.¹⁾ Si impurities show the amphoteric behavior in the GaAs, namely Si on Ga- and As-sites act as donor and acceptor, respectively. In LPE grown GaAs, the distribution of Si impurities on each site is mainly due to the growth temperature.²⁾ The coexistence of both positive (donor) and negative (acceptor) ions cause the large potential fluctuations mixing with conduction and valence band states¹⁾, and luminescence properties of this system are very interesting because of heavy-doping and compensation effects in the radiative recombination processes. In this report, we show photoluminescence properties of the GaAs heavily doped with Si which is highly compensated. Aspects of radiative recombination process in this system are proposed.

© 1984 Optical Society of America