Abstract

We have recently found techniques for easily changing the density of copper vacancies in 30 μm films of Cu₂O on copper. A high density of copper vacancies is produced at 1000°C in a thin layer near the surface of the Cu₂O film, subsequent heat treatment in argon at lower temperatures lowers the vacancy density by diffusion throughout the film. Water quenching quickly stops diffusion and prevents further oxidation. New excitation spectra using a double monochromator have been measured at twenty five degree intervals between room and liquid nitrogen temperature for oxygen vacancy emissions at 740 nm, 840 nm, and the copper vacancy emission at 940 nm for heat treatment temperatures of 300°C, 400°C, 500°C, 600°C, and 700°C.

© 1984 Optical Society of America