Abstract

Annealing of II-VI compounds like ZnSe in contact with molten Zn is known to convert them to n-type. In ZnTe this procedure although increasing the donor concentration has the major effect of introducing a hole level 170-190 meV above the valence band and keeps it p-type. It also introduces an intense emission line labelled ${\text{A}}_1^{\times }$ at 2.361 eV. We will show that this line is due to the recombination of an exciton bound to a double acceptor with the same first ionization energy.

© 1984 Optical Society of America