Reabsorption Kinetics of Free- and Bound-Exciton Luminescence in High-Purity n-GaAs

K. Aoki; K. Yamamoto

doi:10.1364/ICOL.1984.ThB3

International Conference on Luminescence - 1984
Technical Digest Series (Optica Publishing Group, 1984),
paper ThB3
•https://doi.org/10.1364/ICOL.1984.ThB3

Reabsorption Kinetics of Free- and Bound-Exciton Luminescence in High-Purity n-GaAs

K. Aoki and K. Yamamoto

International Conference on Luminescence 1984

Madison, Wisconsin United States
13–17 August 1984
ISBN:

From the session
(ThB)

Open Access

Get PDF
Email
Share
Get Citation
Copy Citation Text
K. Aoki and K. Yamamoto, "Reabsorption Kinetics of Free- and Bound-Exciton Luminescence in High-Purity n-GaAs," in International Conference on Luminescence - 1984, Technical Digest Series (Optica Publishing Group, 1984), paper ThB3.

Export Citation
- BibTex
- Endnote (RIS)
- HTML
- Plain Text
Citation alert
Save article

Abstract

See FF6 for summary.

PDF Article

More Like This

Reabsorption Kinetics of Free- and. Bound-Exciton Luminescence in High-Purity n-GaAs

K. Aoki and K. Yamamoto
FE6 International Conference on Luminescence (ICOL) 1984

Picosecond Luminescence Spectroscopy of Electron-Hole Plasma in GaAs/AlAs Quantum-Well Structure

S. Tanaka, M. Kumo, A. Yamamoto, A. Watanabe, H. Kobayashi, M. Mizuta, H. Hukimoto, and H. Saito
ThB1 International Conference on Luminescence (ICOL) 1984

Self-Trapping of Excitons at the Surface of Rare-Gas Solids and its Manifestation in Luminescence and Desorption

F. Coletti and J. M. Debever
TuI1 International Conference on Luminescence (ICOL) 1984

Previous Article Next Article