Abstract

High purity nominally undoped and Sn-doped liquid phase epitaxial layers irradiated with 2 MeV electrons have been characterized by low temperature photoluminescence measurements. Analysis of the line-shape and the peak shift of the free-to-bound transition in magnetic fields up to 10 T allows an unambiguous identification of the impurities involved /1/. Care was taken to use identical excitation conditions for the measurements of unirradiated and irradiated samples during the annealing stages.

© 1984 Optical Society of America