Abstract

Recent work has shown that a-Si:H films prepared by magnetron sputtering (MSP) have a defect density much lower than that produced by Rf sputtering, because of the decrease in damage from electron bombardment. Photoluminescence (PL) studies on a-Si:H show a broad peak near 1.3 - 1.5 eV due to tail state recombination and a peak near 0.9 eV which is generally ascribed to a dangling bond defect. The 0.9 eV band has been observed in a wide range of a-Si films when excited with subgap light, but comparatively little has been reported on MSP films, especially the effects of doping.

© 1984 Optical Society of America