Abstract

Up to now the properties of nitrogen as an impurity in silicon, e.g. the low electrical activity and the strong interaction with dislocations, are hardly understood. Recently Tajima et al. (1) reported a luminescence line at 1.1223 eV which appears only in nitrogen doped samples. Sauer et al. (2) showed that this line is identical to the A transition of the A, B, C system. This system is due to an exciton localized at an isoelectronic defect of axial symmetry around <111> (C_3v) the chemical nature of which is still unknown.

© 1984 Optical Society of America