Abstract

The fabrication of integrated devices and the efficient mass fabrication of even single devices on GaInAsP/InP DH wafers suffers from the dependence on substrate cleaving to form all mirror surfaces. We have developed wet and dry etching procedures that for the first time provide reproducible, high quality planar facets on DH wafers. As discussed in preliminary reports,^1,2 these procedures make use of etchants that effectively stop at certain desired crystal planes, thus providing extremely smooth and planar surfaces. Previous device work with etched facets^3-5 has not made use of this property although crystallographic etches have been previously explored.^6,7

© 1982 Optical Society of America