Abstract

The recently developed mass-transport technique^1-6 offers possibilities for novel devices in integrated optoelectronics. The first demonstration was a simple method for fabrication of GaInAsP/InP buried-heterostructure (BH) lasers, in which the transported InP filled in an undercut mesa and buried the active region.^1-4 In this paper, we report continued developments. First, for a more complete characterization of the new BH lasers, theoretical and experimental studies were performed to improve 1ight-current (L-I) linearity at high output powers. Second, the mass-transport phenomenon has been used in a new procedure to improve chemically etched mirror facets.⁷ Vertical and smooth mirrors are obtained and the BH lasers with one such mirror have high device yield and threshold currents as low as 5 mA (lowest of quaternary lasers reported to date and an order of magnitude improvement from values previously achieved in etched-mirror lasers^8-10). Finally, the mass-transport technique has been used to form next to the laser a slant mirror which has the capability of deflecting the laser output upward for surface emission.

© 1984 Optical Society of America