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Conferences > IGWO > 1982 > WE > WE2

Temperature Dependence of Threshold Current and Efficiency of GaInAsP/InP Long-Wavelength Lasers Related to Intervalence Band Absorption and Other Nonradiative Carrier Leakage and Recombination

Yasuharu Suematsu and Masahiro Asada

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Abstract

The temperature dependence of the threshold current and the efficiency of GaInAsP/InP lasers was discussed including all possible mechanisms which can cause the strong temperature dependence of the threshold current. It was shown that the break in the temperature-threshold curve is mainly due to the intervalence band absorption. The influence of laser parameters is discussed.

© 1982 Optical Society of America

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