Abstract

The integration of a PIN photodiode with an FET is attractive to obtain low noise, high speed photoreceivers for optical communication systems. Most of the high speed photodiode work to date has been done on conductive substrates which are not suitable for monolithic integration^1-4. In this paper, we report a low operating voltage InGaAs PIN photodiode suitable for optoelectronic monolithic integration, fabricated on a semi-insulating InP substrate with the lowest reported dark current density of 2.5 x 10^-6 A/cm² at -10V bias (0.2nA for a 100μm diameter diode). At the operating voltage of -5V, an external quantum efficiency of >90% at 1.3μm and >83% at 1.55μm, a rise time of <35 ps and a FWHM of <45 ps have been measured.

© 1984 Optical Society of America