With the advent of the MOVRE and MBE epitaxial growth techniques for III-V semiconductors it has become possible to grow large areas of material of ever improving quality. This has stimulated considerable interest in the use of such materials for guided-wave optical devices over recent years, with the prospect of monolithic integration with lasers, detectors and electronics (ie. integrated optoelectronics).
© 1989 Optical Society of AmericaPDF Article
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