Abstract

Molecular beam epitaxy (MBE) has made many important contributions to research and development of III-V compound semiconductor devices. For example, MBE has become the predominant technique of epitaxial material growth for digital heterostructure circuits employing heterojunction bipolar transistors (HBTs) and high electron mobility transistors (HEMTs). This has occurred despite the relatively high cost of MBE apparatus, and the reputation of MBE as an esoteric technology. Since high speed heterostructure devices appear to be moving rapidly toward the production line, it is important to consider the status of MBE in device research and development, and the future of MBE in the transition to production.

© 1985 Optical Society of America