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An Opto-Electronic Dynamic Random Access Memory (DRAM) Cell Utilizing a Three Terminal N-Channel Self-Aligned DOES Device

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The Double Heterostructure Opto-Electronic Switch (DOES) device has been demonstrated as a two terminal [1-3] and a three terminal [4] opto-electronic bistable switch having high and low conduction states with and without optical emission respectively and which can be switched on and off by both an optical and an electrical input signal. The third terminal permits xy addressing of the cell in a manner very similar to the Dynamic Random Access Memories (DRAMS) of silicon technology. Currently in electronic dynamic memories, the limitations on performance and density arise from the minimum ratio of cell to bit line capacitance (i.e. stored cell charge) that will still allow reliable sensing. Using the optical output of the DOES relieves this constraint because it is an active element whose output can be increased to the limits of the device power.

© 1989 Optical Society of America

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