Abstract

Ultra-high-speed signal processing with a bit rate of over 10 Gbit/s will soon be available in GaAs MES-FET and HBT integrated circuits. Such remarkable progress in the device performances is based on the scaling down for MESFET and near ballistic transportation for HBT. Propagation delay times of inverters have been reduced to 6.7 ps/gate and 1.9 ps/gate, and maximum toggle frequencies of flip-flop circuits have reached 31.4 GHz and 22.15 GHz, respectively. Wide-band amplifiers with a band width of about 10 GHz have also been obtained. This paper reviews recent progress in the speed performance of these devices.

© 1989 Optical Society of America