Abstract

A new laser-induced epitaxial growth process is described, and key issues regarding the feasibility of the technique are discussed. Unlike conventional laser-induced processes which generally involve both surface and gas phase photochemistry, the present technique involves only photon-induced surface chemistry. Thus, it is termed laser-induced surface chemical epitaxy (LSCE). The results of x-ray photoelectron studies of thermal and photon-induced surface processes aimed at understanding the mechanisms of the technique are described. This includes meas­urements of reactant sticking coefficients, contaminant levels, and the identification of surface photodecomposition and reaction products. The impact of these results on the feasibility of the LSCE technique and the potential for depositing quantum well and related structures are also presented.

© 1986 Optical Society of America