Abstract

Electrooptic double heterostructure (DH) Al_yGa_1-yAs-Al_xGa_1-x. As p-n junction modulators have been shown to be very efficient since the optical and the junction electric fields are essentially coextensive and minimized in their physical extent.¹ Recent developments of liquid phase epitaxy (LPE) has permitted the monolithic integration of DH lasers with DH phase and absorption modulators.² In integrated optical circuits it may be desirable to use the state of polarization also for information. Processing this information requires devices that can be integrated and efficiently switch the states of polarization which in planar dielectric waveguides are identifiable with TE and TM modes. To this end we study the specific properties of DH modulators where the junction electric field, E_j, is parallel to the crystallographic [110] direction.

© 1976 Optical Society of America