Abstract

This paper reports the room-temperature operation of Ga_1-xIn_xAs_1-yP_y/InP double-heterostructure (DH) diode lasers. Broad-area devices emitting at 1.1 µm have been fabricated from three-layer films grown by liquid-phase epitaxy (LPE) on InP substrates. Pulsed thresholds as low as 2. 8 kA/cm² have been obtained for an active region thickness of about 0.5 µm. With thresholds in this range it should be possible to produce stripe-geometry lasers capable of continuous operation at room temperature. Such cw lasers would be of particular interest for communication systems using fiber optics, which have their minimum transmission loss near 1.1 µm.

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