Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Low-Loss GaAs p+-n-n+ Optical Striplines Fabricated Using Be+-Ion Implantation*

Not Accessible

Your library or personal account may give you access

Abstract

The development of GaAs-based integrated optical circuits (IOCs) requires low-loss three-dimensional waveguides to transmit and confine the optical signal to specific locations on a chip, and also to fabricate various optical components. In this paper, we report the successful fabrication of single-mode p+-n-n+ optical striplines. These striplines have exhibited low loss (a ≈1. 2 cm-1 at 1.06 μm), and the p+ -n junctions have shown sharp breakdown voltages corresponding to average electric fields in the n guiding layer of 2 x 105 V/cm. This suggests the feasibility of developing GaAs modulators, directional couplers and optical switches having lower loss than those reported previously.

© 1976 Optical Society of America

PDF Article
More Like This
Monolithic GaAs Circuit Elements for Integrated Optics*

F. A. Blum and J. C. Campbell
MA4 Integrated Optics (IOPT) 1976

"Propagation Characteristics of Graded-index Optical Waveguides Fabricated by Ion Implantation"

H. Aritome, A. Sakajo, T. Nishimura, K. Masuda, and S. Namba
TuB1 Integrated Optics (IOPT) 1976

Low Loss AlxGa1-xAs Waveguides Grown by Molecular Beam Epitaxy

J. L. Merz and A. Y. Cho
TuC6 Integrated Optics (IOPT) 1976

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.