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Conferences > IPR > 1990 > WE > WE6

Raman microprobe analysis of stress distribution in Si3N4 stripe GaAIAs channel optical waveguides

C. J. Radens, J. T. Boyd, H. E. Jackson, and R. D. Burnham

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Abstract

Raman spectroscopy is a sensitive technique for the nondestructive probing of local material structural and crystalline conditions including strain in semiconductors.1 We have used the Raman microprobe to investigate strain induced by patterned Si3N4 films on GaAIAs waveguide structures.2 We previously observed a double-lobed optical mode field intensity distribution in Si3N4 stripe GaAIAs structures that was consistent with photoelastic waveguiding and confirmed the presence of a compressive stress in the GaAIAs material under the Si3N4 stripe by using the Raman microprobe.2

© 1990 Optical Society of America

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