Abstract

We have investigated reactive ion etching of InP in methane/hydrogen based plasmas. We have determined mask systems and etch chemistries for low roughness anisotropic etching of photonic device structures. Methane/hydrogen mixtures have been known to etch InP, however the simultaneous deposition of carbon containing polymer, surface roughness and lack of reliable rate control has limited their utility.¹ We have carefully examined the role of etching conditions and chemistries to optimize the rate and anisotropy and to understand and control the polymer deposition in methane/hydrogen based etching. Part of the investigation included empirical modeling of the etch process.² We have also studied the inclusion of oxygen in the etch gas for enhanced results.

© 1991 Optical Society of America