Abstract

As silicon is a promising candidate for low cost integrated optical applications the monolithical integration of photodetectors is of major interest. Photodetectors for long wavelength operation have been realized on silicon as discrete devices [l] and in combination with SOI-waveguides [2], having waveguide losses around ldB/cm. Recently, the losses of SiGe-waveguides already reported in [3][4] could be reduced to 0.5dB/cm [5]. In this work the efficient coupling between a SiGe-waveguide and a SiGe-detector is reported, which is a key component for integrated optics. Optical coherent applications, for example, then benefit from the low reflection coefficient at the waveguide/ photodetector transition.

© 1992 Optical Society of America