Abstract
We present a theoretical description of large optical nonlinearities in type II heterostructures. The electronic states in such structures confine the electrons and hole in spatially separate layers. In the GaAs/AlAs system the electrons are confined a the X-point of the Brillouin zone in the AlAs layers and the holes at the Γ-point in the GaAs layers.
© 1990 Optical Society of America
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