Abstract

Modifications of light properties occurring during the propagation of high intensity laser beams in semiconductors have been extensively studied in the past. However, only few works deal with the light induced modification of the polarization state of the incident laser beam. This study is particularly attractive in the case of the Faraday rotation in semi-magnetic semiconductors where, due to the strong exchange interaction existing between the spins of band electrons and holes and that of localized Mn⁺⁺ ions, giant Faraday rotation angles have been measured.^[1]

© 1992 IQEC