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Conferences > IQEC > 1992 > MoK > MoK1
  • XVIII International Quantum Electronics Conference
  • Technical Digest Series (Optica Publishing Group, 1992),
  • paper MoK1

Evidence for Carrier Escape from Active to Cladding in Strained Layer InGaAs-GaAs-AlGaAs Quantum Well Lasers

G. Livescu, E. Finkman, M. T. Asom, L. Luther, J. L. Zilko, and K. D. C. Trapp

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Abstract

Room temperature photoluminescence spectra of strained layer InGaAs-GaAs-AlGaAs quantum well lasers show an unusual broad emission around 1.5µm, originating in the AlGaAs cladding. When the carriers are photogenerated directly in the quantum wells (QW), it is dramatically enhanced at the expense of the QW line, indicating that the carriers escape from the active into the cladding.

© 1992 IQEC

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