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  • XVIII International Quantum Electronics Conference
  • Technical Digest Series (Optica Publishing Group, 1992),
  • paper PTh040

Surface Electric Field Influence on the Carrier Transfer into InGaAs/GaAs Quantum Wells

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Abstract

Transfer time of non-equilibrium carriers into quantum wells (QW) is a parameter of major importance as far as the modulation speed of QW lasers is concerned. In the case of carrier excitation in the vicinity of a QW, carrier capture is purely quantum mechanical and occurs in less than a ps.[1] If the carriers are excited at a distance exceeding 500 Å from the well, classical transport has to be considered. In QW structures with no built in electric fields diffusion is assumed to be the main mechanism of the carrier transfer.

© 1992 IQEC

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