Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • XVIII International Quantum Electronics Conference
  • Technical Digest Series (Optica Publishing Group, 1992),
  • paper PTu089

Exciton Diffusion in CdS1-x Sex Measured by Laser Induced Gratings

Not Accessible

Your library or personal account may give you access

Abstract

In the alloy semiconductor CdS1-x Sex the statistical fluctuations of the band gap energy, due to the substituion of Sulphur by Selenium, localises electrons and holes and consequently the excitons. Measuring the ambipolar diffusion coefficient D in a degenerate four-wave mixing experiment directly proves the drastic reduction of mobility in comparison with the binary constituents.

© 1992 IQEC

PDF Article
More Like This
Diffusion of excitons in CdSe measured by transient laser-induced gratings

Karl-Heinz Pantke, John Erland, Vadim G. Lyssenko, Boris S. Razbirin, and Jørn M. Hvam
QThD20 Quantum Electronics and Laser Science Conference (CLEO:FS) 1992

Exciton Dynamics in CdTe/(Cd,Zn)Te Quantum Wells

H. Kalt, J. Collet, B. Feuer Bacher, S. D. Baranovskii, R. Saleh, P. Thomas, Le Si Dang, and J. Cibert
PTu085 International Quantum Electronics Conference (IQEC) 1992

Observation of High Index Excitonic States in CdS1-xSex Semiconductor Microcrystallite by Two-Photon Spectroscopy

M. Lepore, R. Tommasi, M. Ferrara, and I. M. Catalano
PTu080 International Quantum Electronics Conference (IQEC) 1992

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.