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Conferences > IQEC > 1996 > WI > WI3
  • International Quantum Electronics Conference
  • 1996 OSA Technical Digest Series (Optica Publishing Group, 1996),
  • paper WI3

Picosecond optical response of low growth temperature InGaAs/InAIAs multiple quantum wells

SE Ralph, M Hargis, PW Juodawlkis, C Verber, P Chin, and J Woodall

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Abstract

Low temperature growth of III-V compound semiconductors by molecular beam epitaxy (LT- MBE) provides a unique method of tailoring carrier lifetimes for photonic and electronic device applications. For the GaAs system the LT-MBE growth results in a high density of deep level arsenic anti-site defects which pin the Fermi level near midgap. Subsequent annealing of LT-GaAs results in As precipitates which through Schottky barrier action depletes carriers around the precipitates rendering the material semi-insulating.

© 1996 Optical Society of America

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