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Characterization of Highly Stable Mid-IR, GaSb-Based Laser Diodes

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Highly stable, room-temperature mid-IR, GaSb-based laser diodes have been characterized at various temperatures and driver currents. Up to 54 mW of output power was demonstrated in a 3150- to 3180-nm wavelength range with <20-nm FWHM spectral width.

© 2010 Optical Society of America

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