Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
Conferences > MSBA > 1985 > MB > MB3

Simultaneous Exposure of SiO2 and ThF4 to XeF2 and Energetic Electrons*

M. A. Loudiana and J. T. Dickinson

Not Accessible

Your library or personal account may give you access

Abstract

This study examines the effect of exposing thin films of SiO2 and ThF4 to gaseous XeF2 and energetic electrons. These systems are of interest to VLSI and optical coatings technology. The experiments were done in a stainless steel UHV chamber with Auger Electron Spectroscopy (AES) and Quadrupole Mass Spectroscopy capabilities. Changes in the mass of the thin films was measured with a sensitive, thermally stabilized quartz crystal microbalance. Details of the equipment and procedure are given elsewhere.1

© 1985 Optical Society of America

PDF Article
More Like This
Laser-Initiated Dry Etching of SiO2

Jack O. Chu, George W. Flynn, Peter D. Brewer, and Richard M. Osgood
TuC5 Microphysics of Surfaces, Beams, and Adsorbates (MSBA) 1985

Photochemical Deposition of Sn for In-Situ Selected Area Doping of MBE GaAs (001)

Steven P. Kowalczyk and D.L. Miller
WC11 Microphysics of Surfaces, Beams, and Adsorbates (MSBA) 1985

Laser-assisted chemical etching of SiO2

B. T. DAI, S. D. ALLEN, and B. S. AGRAWALLA
THM17 Conference on Lasers and Electro-Optics (CLEO:S&I) 1985

View More...
Select as filters
Select Topics Cancel
Top
       
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.
Privacy | Terms of Use