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Photochemical Deposition of Sn for In-Situ Selected Area Doping of MBE GaAs (001)

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Abstract

Ultraviolet (UV) initiated microchemistry has recently emerged as a possible new technique in microfabrication for solid-state electronic applications.1-3 Much of the recent research has centered on delineated deposition of metals by UV photolysis.4 One intriguing possibility that this capability opens up is that of selected area doping in conjunction with molecular beam epitaxy (MBE) technology.

© 1985 Optical Society of America

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