Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
Conferences > MSBA > 1987 > TuC > TuC3

Radical-Surface Interaction and Its In-Situ Monitoring on GaAs and AlGaAs Surfaces in an Ultrahigh-Vacuum Etching and Cleaning System

K. Asakawa, S. Sugata, and N. Takado

Not Accessible

Your library or personal account may give you access

Abstract

Interaction between a plasma-excited radical beam and a GaAs surface has been studied for establishing plasma-assisted surface cleaning by using an enclosed ultrahigh-vacuum RIBE (Reactive Ion Beam Etching)1) and RBC (Radical Beam Cleaning)2) system.

© 1987 Optical Society of America

PDF Article
More Like This
Laser-induced emission of ions and neutrals from the surfaces of transparent optical media

L. L. CHASE and G. GDOWSKI
FBB5 International Quantum Electronics Conference (IQEC) 1987

Buried AlGaAs/GaAs/InGaAs laser diodes fabricated by in-situ anisotropic etching and molecular beam epitaxy

D. Vakhshoori, M. Hong, L. H. Grober, J. P. Mannaerts, S. N. G. Chu, J. D. Wynn, and R. S. Freund
CWB4 Conference on Lasers and Electro-Optics (CLEO:S&I) 1993

Laser-assisted Cleaning of GaAs Surfaces Prior to Metalorganic Vapour Phase Epitaxy

D C Rodway, K J Mackey, P C Smith, and A W Vere
WC6 Microphysics of Surfaces, Beams, and Adsorbates (MSBA) 1989

View More...
Select as filters
Select Topics Cancel
Top
       
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.
Privacy | Terms of Use