Abstract

Plasma assisted chemical vapor deposition of silicon films from silanes is widely used in the fabrication of silicon devices. A fundamental understanding of the mechanisms responsible for film growth would have considerable utility in the optimization of processing parameters. Reactive silicon surfaces sites and gas phase ion chemistry are believed to have important roles in the film growth process. Yet, the natures of such surface species and chemistry are highly uncertain. The trend towards increasing subminiaturization of silicon devices also demands a solution to the deleterious formation of silicon dust during film deposition.

© 1989 Optical Society of America