Abstract

Although it was observation of efficient photoluminescence [PL] from porous silicon that prompted numerous investigations into the optoelectronic properties of group IV semiconductor nanocrystals, there is interest in other related materials which are more robust in various chemical and thermal ambients and which can be easily incorporated into standard silicon VLSI processing. A promising approach that meets the above requisites is synthesis of semiconductor nanocrystals in an SiO₂ matrix accomplished by various techniques. In this letter we report on the fabrication of a Ge nanocrystal-based electroluminescent device using ion implantation and precipitation.

© 1995 Optical Society of America