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Conferences > CLEOPR > 2001 > P1 > P1_77
  • The 4th Pacific Rim Conference on Lasers and Electro-Optics
  • Technical Digest Series (Optica Publishing Group, 2001),
  • paper P1_77

Photocurrent Response of Shottky Diode on Silicon-Implanted SiO2 Substrate

Gong-Ru Lin and Chin-Chia Hsu

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Abstract

We briefly report the optoelectronic characteristics of Shottky-type Photodiode fabricated on the Silicon-implanted Borosilicate glass (SiO2:Si+) - a novel nano-crystallite Si semi-conducting material. The dark current, photocurrent and breakdown voltage of the SiO2:Si+ photodiode illuminated by Ar+ laser are measured. The effect of annealing time on the semi-conducting property of such material is characterized.

© 2001 IEEE

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