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Conferences > OAA > 1991 > WE > WE3

Strained Layer Quantum Well Semiconductor Optical Amplifiers: Polarization Insensitive Amplification

M. Joma, H. Horikawa, M. Nakajima, M. Kawahara, and T. Kamijoh

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Abstract

Polarization insensitive optical amplification was demonstrated in newly developed semiconductor optical amplifiers which have strained GaInAsP quantum well structures. We tailored the active region of the quaternary strained layer quantum well structure with small biaxially tensile strain of 0.2% in the well layers for polarization insensitive operation.

© 1991 Optical Society of America

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