Abstract

Quantum well structures, consisting of alternate thin layers of two semiconductors (such as GaAs and GaAIAs), show an unusual electric field dependence of the optical absorption near the optical absorption edge called the quantum-confined Stark effect (QCSE).¹ This effect enables large changes in optical transmission in material only microns thick for voltages of a few volts. The total energy per unit optical area required to make these changes is ~1-30 fJ/µm², making it much more efficient than absorption saturation or gain mechanisms at room temperature.

© 1986 Optical Society of America