Abstract

Ion beam sputtering was used to deposit a series of silicon nitride films. These films, ranging in chemical composition from silicon to stoichiometric silicon nitride, were deposited with various deposition parameters. The variations in optical constants and stresses with chemical composition were investigated using Rutherford backscatter spectroscopy to determine both the chemical composition and density. Aluminum and boron nitride films were also deposited with ion beam sputtering. The properties of these materials are discussed. An alternate deposition process, plasma plating, was used to investigate the effects of hydrogen on the optical and mechanical properties of silicon nitride, silicon, and germanium films. The optical constants, stresses, and bandgap energies were measured and compared with those of nonhydrogenated films. It was found that the incorporation of hydrogen in these materials resulted in a decrease in refractive index and an increase in bandgap energy. The role of hydrogen in altering film properties and how it is incorporated into the atomic structure of these materials are discussed.

© 1989 Optical Society of America