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Self-aligned stripe antiguided diode-laser array

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Abstract

Phase-locked arrays of antiguides (negative-index guides) have demonstrated the unique ability to operate in phase with diffraction-limited beams to high pulsed and cw output powers. These types of sources are desirable for many applications, such as space communications, second-harmonic generation, and optical-disk recording, because they are monolithic and require no active phase control. Optimal performance from these array structures is obtained when the device is properly designed to operate close to the resonance condition of the in-phase mode. To achieve such a resonant optical waveguide (ROW) array requires accurate control of thicknesses and aluminum compositions of the passive guide layer and the cladding layers between array elements. In previously reported antiguided arrays, the antiguides are created by the second-phase growth of an AlGaAs passive guide layer, a (lower-index) AlGaAs cladding layer, and a GaAs cap layer between array elements. However, because these layers are grown over an etched array pattern in a second-phase growth, the resulting layers are curved and their thicknesses are difficult to reproducibly control.

© 1990 Optical Society of America

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