Abstract

A GaAs/GaAsAs 3×3 vertical-cavity two-dimensional surface-emitting laser array with close packing has been fabricated by a two-step metalorganic chemical vapor deposition (MOCVD). Individual circular elements were designed to have 7-µm diameters on 9-µm centers, although near field ovservation showed substantial narrowing of lasing diameter. This represents the closest packed surface-emitting laser array reported to date with semiconductor current confinement layers. A maximum of 7 of 9 laser elements were found to be lasing at one time. A minimum threshold of 240 mA was observed under room-temperatyure pulsed operation. Lasing was also confirmed by spectral analysis.

© 1990 Optical Society of America