Abstract

We present the fabrication procedure and material characterizations of semiconductor microcrystallite-doped glass films made by the cosputtering of Corning 7059 and Cd_xSSe_1-x. Based onx-ray photoelectron spectroscopy, the chemical composition of the deposited films was evaluated. The presence of the semiconductor crystallites was verified by Raman spectroscopy. Transmission electron microscopy (TEM) studies revealed that the average microcrystallite diameters ranged from 3 to 5 nm. The semiconductor crystallites grow with the temperature of the postdeposition thermal treatment. This was directly verified by TEM measurements and was indirectly verified by a blue shift of the transmission and luminescence spectra. The refractive index and absorption coefficient have been measured with ellipsometric and prism-coupling techniques. The results are shown for several wavelengths.

© 1990 Optical Society of America