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Metal-semiconductor-metal (MSM) photodetectors based on the InGaAs/InP material system are an emerging technology for use in the long wavelength 1.3 µm and 1.55 µm fiber bands. In this talk I give results for InGaAs MSM detectors recently fabricated at Bellcore and discuss the performance characteristics and issues for this type of photodetector.
© 1990 Optical Society of America
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