Infrared optical transitions to above barrier states in asymmetric semiconductor heterostructures

Gregory N. Henderson; Thomas K. Gaylord; Elias N. Glytsis; Emmanuel Anemogiannis; Lawrence C. West; Charles W. Roberts; Moses T. Asom

doi:10.1364/OAM.1993.MUU.6

OSA Annual Meeting
Technical Digest Series (Optica Publishing Group, 1993),
paper MUU.6
•https://doi.org/10.1364/OAM.1993.MUU.6

Infrared optical transitions to above barrier states in asymmetric semiconductor heterostructures

Gregory N. Henderson, Thomas K. Gaylord, Elias N. Glytsis, Emmanuel Anemogiannis, Lawrence C. West, Charles W. Roberts, and Moses T. Asom

OSA Annual Meeting 1993

Toronto Canada
3–8 October 1993
ISBN:

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Quantum-Well Devices and Applications (MUU)

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G. N. Henderson, T. K. Gaylord, E. N. Glytsis, E. Anemogiannis, L. C. West, C. W. Roberts, and M. T. Asom, "Infrared optical transitions to above barrier states in asymmetric semiconductor heterostructures," in OSA Annual Meeting, Technical Digest Series (Optica Publishing Group, 1993), paper MUU.6.

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Abstract

An asymmetric GaAs/GaAlAs electron wave Fabry-Perot interference filter has been designed with two above-barrier quasi-bound states for infrared optical transitions.

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