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Conferences > OBI > 1985 > WD > WD2

Models for Absorption-induced Optical Bistability in CdS and Multiple Quantum Well GaAs

J. W. Haus, C. C. Sung, Y. C. Li, C. M. Bowden, and J. M. Cook

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Abstract

Mirrorless optical bistability has been established in CdS1 and in multiple quantum well (MQW) GaAs structures2. The mechanism responsible for the bistable behavior in these semiconductors is the coupling between the temperature distribution and the electric field intensity in the sample. In these semiconductors, the mechanism is simple enough that a quantitative analysis should be possible. However, a successful model of bistability in these systems must await a careful experimental analysis of the thermal boundary conditions3. With this caveat we have proceeded with the theoretical development. Steady-state results for CdS and MQW GaAs are presented.

© 1985 Optical Society of America

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