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40 dB Overwrite-Modulation Phase—Change Optical Disk Using In-Sb-Te Alloy

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Abstract

A single-beam overwrite was achieved by an In-Sb-Te phase-change optical disk. The carrier to noise (C/N) ratio of more than 50 dB and the overwrite modulation of -40 dB were obtained for overwriting frequencies of 2 MHz and 3 MHz using a low power laser diode of 30 mW. The high C/N ratio and the excellent overwrite modulation were due to the large reflectivity difference between the written and erased phases and the use of suitable write/erase power.

© 1989 Optical Society of America

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